Design of High-Power Red VCSEL on a Removable Substrate

In this work, the architecture of a high-power InAlGaP/InGaP vertical-cavity surface-emitting laser (VCSEL) with an emission wavelength 680 nm was studied. The design quantum well, including well thickness, indium composition, and barrier aluminum composition targeting wavelength, elaborately optimized. Moreover, influences leakage current, temperature dependence optical gain, resonance mode gain to threshold current under different compositions were investigated. Lastly, characteristics VCSEL substrate removal have also been calculated 24% 40.6% improvement in thermal resistance operating range, respectively. It holds great promise for red application.